Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC

被引：73
|
作者：
Hamida, A. Ferhat
Ouennoughi, Z.
Sellai, A. [1 ]
Weiss, R. [2 ]
Ryssel, H. [2 ]
机构：
[1] Sultan Qaboos Univ, Dept Phys, Muscat 123, Oman
[2] Univ Erlangen Nurnberg, Chair Elect Devices, D-91508 Erlangen, Germany
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 04期
关键词：
D O I：
10.1088/0268-1242/23/4/045005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrical properties of tungsten on silicon carbide (4H-SiC) Schottky diodes are investigated through the analysis of the forward current-voltage (I-V) characteristics measured at elevated temperatures within the range of 303-448 K. The subsequently derived Schottky barrier heights (SBHs) and ideality factors are found to be temperature dependent with distributions that are adequately explained within the framework of the model proposed by Tung in which he considers the barrier at a metal-semiconductor interface as consisting of locally non-uniform but interacting patches of different barrier heights embedded in a background of uniform barrier height. A uniform barrier height of 1.248 eV, a Richardson's constant of 129.95 A cm(-2) K-2 and a factor T-o of 23.92 K obtained agree very well with values published previously for similar Schottky barrier systems. Therefore, it has been concluded that the temperature-dependent I-V characteristics of the device can be successfully explained with lateral inhomogeneities distribution of the SBH.
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页数：6
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