A 105-GHz, Supply-Scaled Distributed Amplifier in 90-nm SiGe BiCMOS

被引：0
|
作者：
Fang, Kelvin [1 ]
Levy, Cooper [1 ]
Buckwalter, James F. [1 ]
机构：
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
来源：
2015 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2015年
基金：
美国国家科学基金会;
关键词：
Distributed amplifiers; millimeter-wave amplifiers; wideband power amplifiers; SiGe BiCMOS;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Distributed amplifiers (DAs) feature large bandwidth but relatively low gain and power efficiency. We present a supply-scaling technique to enhance the efficiency of a broadband DA. The presented eight-stage amplifier has a gain of 12 dB over a 3 dB bandwidth from 14-105 GHz and achieves peak output power of 17 dBm at 12.6% power-added efficiency (PAE) at 50 GHz. The DA is designed in a 90-nm SiGe BiCMOS process and occupies an area of 2.65 mm x 0.57 mm. Total dc power consumed is 297 mW.
引用
收藏
页码：182 / 185
页数：4
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