A 60-GHz Adaptively Biased Power Amplifier with Predistortion Linearizer in 90-nm CMOS

被引：0
|
作者：
Weng, Shih-Min [1 ]
Lee, Yi-Chun [1 ]
Chen, Tse-Hung [1 ]
Liu, Jenny Yi-Chun [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
来源：
2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS | 2018年
关键词：
Adaptive bias; CMOS; millimeter-wave; power combining; power amplifier; predistortion linearizer; V-band;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a high output power high efficiency 4-way combining power amplifier (PA) is proposed. By using adaptive bias control and predistortion linearization simultaneously, both the backoff efficiency and output 1-dB compression point (OP1dB) are enhanced. Comparing with conventional cold-FET linearizers, the proposed linearizer employed a differential feedback to gate and body exhibits greater gain compensation capability. The V-band PA in 90-nm CMOS demonstrates an OP1dB of 18.9 dBm, and a power-added efficiency at OP1dB of 13.9%.
引用
收藏
页码：651 / 654
页数：4
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