60-GHz PA and LNA in 90-nm RF-CMOS

被引：0
|
作者：
Yao, Terry [1 ]
Gordon, Michael [1 ]
Yau, Kenneth [1 ]
Yang, M. T. [2 ]
Voinigescu, Sorin P. [1 ]
机构：
[1] Univ Toronto, Dept Elect & Comp Engn, 10 Kings Coll Rd, Toronto, ON M5S 3G4, Canada
[2] TSMC, Sci Based Ind Pk, Hsinchu 30077, Taiwan
来源：
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2006年
基金：
加拿大自然科学与工程研究理事会;
关键词：
cMOS millimeter-wave integrated circuits; characteristic current densities; f(MAX); f(T); inductors; low-noise; amplifiers; noise figure; power amplifiers; transformers;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
60-GHz power (PA) and low-noise (LNA) amplifiers implemented in a 90-nm RF-CMOS process with thick 9-metal layer copper backend and transistor f(T)/f(MAX) Of 140GHz/170GHz are reported. The PA operates from a 1.5V supply with 5.2dB power gain, a 3-dB bandwidth > 13GHz, a P-1dB of +6.4dBm with 7% PAE and a saturated output power of +9.3dBm at 60GHz. The LNA features 14.6dB gain, an IIP3 of -6.8dBm, and a simulated NF of 4.5dB, while drawing 16mA from a 1.5V supply. Both circuits employ inductors which reduce the total PA and LNA die sizes to 0.35 x 0.43 mm(2) and 0.35 x 0.40 mm(2), respectively.
引用
收藏
页码：147 / +
页数：3
相关论文
共 50 条
  • [1] 60-GHz PA and LNA in 90-nm RF-CMOS
    Yao, Terry
    Gordon, Michael
    Yau, Kenneth
    Yang, M. T.
    Voinigescu, Sorin P.
    [J]. 2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2006, : 125 - 128
  • [2] Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS Technology
    Lin, Jau-Jr
    To, Kun-Hin
    Brown, Bill
    Hammock, Donna
    Majerus, Michael
    Tutt, Marcel
    Huang, W. Margaret
    [J]. 2008 IEEE CSIC SYMPOSIUM, 2008, : 108 - 111
  • [3] 60-GHz Integrated Transmitter Development in 90-nm CMOS
    Dawn, Debasis
    Sen, Padmanava
    Sarkar, Saikat
    Perumana, Bevin
    Pinel, Stephane
    Laskar, Joy
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (10) : 2354 - 2367
  • [4] A 60-GHz 90-nm CMOS cascode amplifier with interstage matching
    Heydari, B.
    Reynaert, P.
    Adabi, E.
    Bohsali, M.
    Afshar, B.
    Arbabian, M. A.
    Niknejad, A. M.
    [J]. 2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, 2007, : 225 - 228
  • [5] A 60-GHz LNA WITH 18.6-dB GAIN AND 5.7-dB NF IN 90-nm CMOS
    Kang, Kai
    Brinkhoff, James
    Lin, Fujiang
    [J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2010, 52 (09) : 2056 - 2059
  • [6] A HIGH-EFFICIENCY 60-GHz INDIRECT LOCAL OSCILLATOR IN 90-nm CMOS
    Byeon, Chul Woo
    Park, Chul Soon
    [J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2016, 58 (09) : 2091 - 2093
  • [7] A 60-GHz FSK Transceiver with Automatically-Calibrated Demodulator in 90-nm CMOS
    Wang, Huaide
    Hung, Meng-Hsiung
    Yeh, Yu-Ching
    Lee, Jri
    [J]. 2010 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2010, : 95 - 96
  • [8] A 60-GHz Adaptively Biased Power Amplifier with Predistortion Linearizer in 90-nm CMOS
    Weng, Shih-Min
    Lee, Yi-Chun
    Chen, Tse-Hung
    Liu, Jenny Yi-Chun
    [J]. 2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS, 2018, : 651 - 654
  • [9] 60-GHz Millimeter-Wave Identification Reader on 90-nm CMOS and LTCC
    Pursula, Pekka
    Karttaavi, Timo
    Kantanen, Mikko
    Lamminen, Antti
    Holmberg, Jan
    Lahdes, Manu
    Marttila, Ilkka
    Lahti, Markku
    Luukanen, Arttu
    Vaha-Heikkila, Tauno
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2011, 59 (04) : 1166 - 1173
  • [10] Parasitic-Insensitive Linearization Methods for 60-GHz 90-nm CMOS LNAs
    Li, Wei-Tsung
    Tsai, Jeng-Han
    Yang, Hong-Yuan
    Chou, Wei-Hung
    Gea, Shyh-Buu
    Lu, Hsin-Chia
    Huang, Tian-Wei
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (08) : 2512 - 2523
12345