A 60-GHz Adaptively Biased Power Amplifier with Predistortion Linearizer in 90-nm CMOS

被引：0

作者：

Weng, Shih-Min ^{[1
]}

Lee, Yi-Chun ^{[1
]}

Chen, Tse-Hung ^{[1
]}

Liu, Jenny Yi-Chun ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

来源：

2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS | 2018年

关键词：

Adaptive bias; CMOS; millimeter-wave; power combining; power amplifier; predistortion linearizer; V-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a high output power high efficiency 4-way combining power amplifier (PA) is proposed. By using adaptive bias control and predistortion linearization simultaneously, both the backoff efficiency and output 1-dB compression point (OP1dB) are enhanced. Comparing with conventional cold-FET linearizers, the proposed linearizer employed a differential feedback to gate and body exhibits greater gain compensation capability. The V-band PA in 90-nm CMOS demonstrates an OP1dB of 18.9 dBm, and a power-added efficiency at OP1dB of 13.9%.

引用

页码：651 / 654

页数：4

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