A 105-GHz, Supply-Scaled Distributed Amplifier in 90-nm SiGe BiCMOS

被引：0

作者：

Fang, Kelvin ^{[1
]}

Levy, Cooper ^{[1
]}

Buckwalter, James F. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

2015 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2015年

基金：

美国国家科学基金会;

关键词：

Distributed amplifiers; millimeter-wave amplifiers; wideband power amplifiers; SiGe BiCMOS;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Distributed amplifiers (DAs) feature large bandwidth but relatively low gain and power efficiency. We present a supply-scaling technique to enhance the efficiency of a broadband DA. The presented eight-stage amplifier has a gain of 12 dB over a 3 dB bandwidth from 14-105 GHz and achieves peak output power of 17 dBm at 12.6% power-added efficiency (PAE) at 50 GHz. The DA is designed in a 90-nm SiGe BiCMOS process and occupies an area of 2.65 mm x 0.57 mm. Total dc power consumed is 297 mW.

引用

页码：182 / 185

页数：4

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