A 105-GHz, Supply-Scaled Distributed Amplifier in 90-nm SiGe BiCMOS

被引：0

作者：

Fang, Kelvin ^{[1
]}

Levy, Cooper ^{[1
]}

Buckwalter, James F. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

2015 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2015年

基金：

美国国家科学基金会;

关键词：

Distributed amplifiers; millimeter-wave amplifiers; wideband power amplifiers; SiGe BiCMOS;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Distributed amplifiers (DAs) feature large bandwidth but relatively low gain and power efficiency. We present a supply-scaling technique to enhance the efficiency of a broadband DA. The presented eight-stage amplifier has a gain of 12 dB over a 3 dB bandwidth from 14-105 GHz and achieves peak output power of 17 dBm at 12.6% power-added efficiency (PAE) at 50 GHz. The DA is designed in a 90-nm SiGe BiCMOS process and occupies an area of 2.65 mm x 0.57 mm. Total dc power consumed is 297 mW.

引用

页码：182 / 185

页数：4

共 50 条

[31] A 300GHz Frequency Synthesizer with 7.9% Locking Range in 90nm SiGe BiCMOS
Chiang, Pei-Yuan
Wang, Zheng
Momeni, Omeed
Heydari, Payam
2014 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC), 2014, 57 : 260 - +
[32] A 10 to 170 GHz Distributed Amplifier Using 130-nm SiGe HBTs
Li, Yihu
Goh, Wang-Ling
Tang, Hailin
Liu, Haitao
Deng, Xiaodong
Xiong, Yong-Zhong
2016 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS (ISIC), 2016,
[33] A Ka-Band High-Pass Distributed Amplifier in 120nm SiGe BiCMOS
Gathman, Timothy D.
Buckwalter, James F.
2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT), 2010, : 952 - 955
[34] An Ultra-Broadband Subharmonic Mixer With Distributed Amplifier Using 90-nm CMOS Technology
Hung, Shih-Han
Cheng, Kai-Wen
Wang, Yeong-Her
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (10) : 3650 - 3657
[35] A 30-dB 1-16-GHz low noise IF amplifier in 90-nm CMOS
曹佳
李智群
李芹
陈亮
张萌
吴晨健
王冲
王志功
Journal of Semiconductors, 2013, 34 (08) : 133 - 143
[36] P1dB Optimization Methodology for 130 nm SiGe BiCMOS 60 GHz Power Amplifier
Wu, Wenguang
Gu, Jiangmin
Lim, Wei Meng
Yao, Feijie
Sui, Wenquan
Siek, Liter
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2015, 7 (03) : 272 - 275
[37] Power-efficient low-noise 86 GHz broadband amplifier in 130 nm SiGe BiCMOS
Ding, Ran
Xuan, Zhe
Yao, Peng
Baehr-Jones, T.
Prather, D.
Hochberg, M.
ELECTRONICS LETTERS, 2014, 50 (10) : 741 - U177
[38] Design of 60-GHz 90-nm CMOS Balanced Power Amplifier With Miniaturized Quadrature Hybrids
Lin, Chien-Chih
Yu, Chun-Han
Kuo, Hsin-Chih
Chuang, Huey-Ru
2014 IEEE TOPICAL CONFERENCE ON POWER AMPLIFIERS FOR WIRELESS AND RADIO APPLICATIONS (PAWR), 2014, : 52 - 54
[39] A 94 GHz Bandwidth Transimpedance Amplifier in 55nm SiGe BiCMOS for High Speed Optical Receivers
Cuskelly, Lachlan
Falt, Christopher
Schvan, Peter
2024 IEEE 24TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, SIRF, 2024, : 63 - 66
[40] A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications
Bucher, Thomas
Grzyb, Janusz
Hillger, Philipp
Rucker, Holger
Heinemann, Bernd
Pfeiffer, Ullrich R.
ESSCIRC 2021 - IEEE 47TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC), 2021, : 369 - 372

← 1 2 3 4 5 →