Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices

被引：0
|
作者：
Hjalmarson, H. P. [1 ]
Nguyen, D. D. [1 ]
Kambour, K. E. [1 ]
Kouhestani, C. [1 ]
Devine, R. A. B. [1 ]
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源：
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 11 | 2013年 / 58卷 / 07期
关键词：
SWITCHING OXIDE TRAPS; DOSE-RATE SENSITIVITY; BIPOLAR-TRANSISTORS; CENTERS;
D O I：
10.1149/05807.0049ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The equivalent role of hydrogen cracking in radiation effects and Negative Bias Temperature Instability (NBTI) is described. A prediction concerning thickness dependence is compared with data. The temperature dependence of interface trap density is explained.
引用
收藏
页码：49 / 54
页数：6
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