"Non-Hydrogen-Transport" Characteristics of Dynamic Negative-Bias Temperature Instability

被引：17
|
作者：
Teo, Zhi Qiang [1 ]
Ang, Diing Shenp [1 ]
Ng, Chee Mang [2 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 04期
关键词：
Dispersive transport; hole traps; interface traps; reaction-diffusion; ultrafast switching measurement; DEPENDENCE;
D O I：
10.1109/LED.2009.2039848
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It has been proposed that negative-bias temperature instability (NBTI) is driven by interface-state generation, rate limited by hydrogen transport. In this letter, we examine dynamic NBTI characteristics and present evidence which does not conform to a hydrogen-transport model. It is observed that the amount of recovery of the threshold voltage shift vertical bar Delta V-t vertical bar remains constant, independent of the number of stress/recovery (SR) cycles. This behavior is inconsistent with the hydrogen-transport model, which stipulates that the amount of vertical bar Delta V-t vertical bar recovery should decrease with increase in the number of SR cycles. Results show that dynamic NBTI is made up of a symmetric "switching hole-trap" mechanism superimposed on a background of relatively permanent deep-level hole trap and interface-state generation.
引用
收藏
页码：269 / 271
页数：3
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