Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices

被引：0

作者：

Hjalmarson, H. P. ^{[1
]}

Nguyen, D. D. ^{[1
]}

Kambour, K. E. ^{[1
]}

Kouhestani, C. ^{[1
]}

Devine, R. A. B. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 11 | 2013年 / 58卷 / 07期

关键词：

SWITCHING OXIDE TRAPS; DOSE-RATE SENSITIVITY; BIPOLAR-TRANSISTORS; CENTERS;

D O I：

10.1149/05807.0049ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The equivalent role of hydrogen cracking in radiation effects and Negative Bias Temperature Instability (NBTI) is described. A prediction concerning thickness dependence is compared with data. The temperature dependence of interface trap density is explained.

引用

页码：49 / 54

页数：6

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