Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices

被引：0

作者：

Hjalmarson, H. P. ^{[1
]}

Nguyen, D. D. ^{[1
]}

Kambour, K. E. ^{[1
]}

Kouhestani, C. ^{[1
]}

Devine, R. A. B. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 11 | 2013年 / 58卷 / 07期

关键词：

SWITCHING OXIDE TRAPS; DOSE-RATE SENSITIVITY; BIPOLAR-TRANSISTORS; CENTERS;

D O I：

10.1149/05807.0049ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The equivalent role of hydrogen cracking in radiation effects and Negative Bias Temperature Instability (NBTI) is described. A prediction concerning thickness dependence is compared with data. The temperature dependence of interface trap density is explained.

引用

页码：49 / 54

页数：6

共 50 条

[41] A generalized reaction-diffusion model with explicit H-H2 dynamics for negative-bias temperature-instability (NBTI) degradation
Kufluoglu, Haldun
Alam, Muhammad Ashraful
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (05) : 1101 - 1107
[42] Overcoming Ambient Drift and Negative-Bias Temperature Instability in Foundry Carbon Nanotube Transistors
Yu, Andrew C.
Srimani, Tathagata
Shulaker, Max M.
ACS APPLIED MATERIALS & INTERFACES, 2025, 17 (13) : 20411 - 20417
[43] The negative bias temperature instability in MOS devices: A review
Stathis, JH
Zafar, S
MICROELECTRONICS RELIABILITY, 2006, 46 (2-4) : 270 - 286
[44] A method for negative bias temperature instability (NBTI) measurements on power VDMOS transistors
Prijic, A.
Dankovic, D.
Vracar, Lj
Manic, I.
Prijic, Z.
Stojadinovic, N.
MEASUREMENT SCIENCE AND TECHNOLOGY, 2012, 23 (08)
[45] Hot carrier and negative-bias temperature instability reliabilities of strained-si MOSFETs
Liu, Chuan-Hsi
Pan, Tung-Ming
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (07) : 1799 - 1803
[46] Mechanism of negative-bias temperature instability in polycrystalline-silicon thin film transistors
1600, American Inst of Physics, Woodbury, NY, USA (76):
[47] Evolution of Hole Trapping in the Oxynitride Gate p-MOSFET Subjected to Negative-Bias Temperature Stressing
Boo, A. A.
Ang, D. S.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (11) : 3133 - 3136
[48] A comprehensive modeling of dynamic negative-bias temperature instability in PMOS body-tied FinFETs
Lee, H
Lee, CH
Park, D
Choi, YK
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (04) : 281 - 283
[49] MECHANISM OF NEGATIVE-BIAS TEMPERATURE INSTABILITY IN POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS
MAEDA, S
MAEGAWA, S
IPPOSHI, T
NISHIMURA, H
ICHIKI, T
MITSUHASHI, J
ASHIDA, M
MURAGISHI, T
INOUE, Y
NISHIMURA, T
JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 8160 - 8166
[50] Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices
Xu, Ren-Ren
Zhang, Qing-Zhu
Zhou, Long-Da
Yang, Hong
Gai, Tian-Yang
Yin, Hua-Xiang
Wang, Wen-Wu
CHINESE PHYSICS B, 2022, 31 (01)

← 1 2 3 4 5 →