Investigation of resistive switching in graphite-like carbon thin film for non-volatile memory applications

被引：21

作者：

Ren, Bing ^{[1
]}

Wang, Lin ^{[1
]}

Wang, Linjun ^{[1
]}

Huang, Jian ^{[1
]}

Tang, Ke ^{[1
]}

Lou, Yanyan ^{[2
]}

Yuan, Dachao ^{[1
]}

Pan, Zhangmin ^{[1
]}

Xia, Yiben ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China

[2] Shanghai Univ, Lab Microstruct, Shanghai 200444, Peoples R China

来源：

VACUUM | 2014年 / 107卷

基金：

中国国家自然科学基金; 国家教育部博士点专项基金资助;

关键词：

Resistance random access memory; Graphite-like carbon film; Magnetron sputtering; AMORPHOUS-CARBON; NANODEVICES; MECHANISM;

D O I：

10.1016/j.vacuum.2014.03.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Graphite-like carbon films were deposited on Al/SiO2/Si substrates by using Direct Current magnetron sputtering method. Stable and reliable bipolar resistive switching (RS) characteristics were observed in Cu/a-C/Al/SiO2/Si multi-layer structures. An ON/OFF ratio of about 3, a retention time of more than 10(5) s, and switching threshold voltages of less than 3 V were achieved. I-V properties in both low resistance state and high resistance state can be well explained by the space charge limited current model. The observed RS behaviors are attributed to the electron trapping and detrapping at deep level defects in a-C films. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：1 / 5

页数：5

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