Highly stable switching and long retention property of spin coated ZnO thin film for resistive non-volatile memory application

被引：4

作者：

More, Kiran D. ^{[1
,2
]}

Narwade, Vijaykiran N. ^{[1
]}

Halge, Devidas, I ^{[1
]}

Dadge, Jagdish W. ^{[3
]}

Khairnar, Rajendra S. ^{[1
]}

Bogle, Kashinath A. ^{[1
]}

机构：

[1] Swami Ramanand Teerth Marathwada Univ, Sch Phys Sci, Thin Film & Devices Lab, Nanded 431606, India

[2] Yeshwant Jr Coll, Umri 431807, India

[3] Coll Engn, Dept Phys, Pune 411005, Maharashtra, India

来源：

MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 09期

关键词：

resistive switching; unipolar; nano-crystalline ZnO; memory device;

D O I：

10.1088/2053-1591/ab3024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly stable unipolar resistive switching behaviour of Pt/ZnO/Al structure with long retention (in the order of 10 5 min) and stable endurance (for > 200 cycles) is reported in this work. Even at lower SET and RESET voltages excellent stability for > 200 SET and RESET cycles was observed. The non-linear fitting of the data indicates that conduction mechanism at low resistance state and high resistance state was dominated by the space charge limited conduction/Ohmic and Poole-Frenkel emission, respectively. The migration of oxygen vacancies under applied field along a filament is responsible for the resistive switching action.

引用

页数：7

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