Large-scalable graphene oxide films with resistive switching for non-volatile memory applications

被引：0
|
作者：
Brzhezinskaya, M. [1 ]
Kapitanova, O.O. [2 ]
Kononenko, O.V. [3 ]
Koveshnikov, S. [3 ]
Korepanov, V. [3 ]
Roshchupkin, D. [3 ]
机构：
[1] Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Str. 15, Berlin,12489, Germany
[2] Department of Chemistry, Moscow State University, Moscow,119991, Russia
[3] Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka,142432, Russia
来源：
Journal of Alloys and Compounds | 2022年 / 849卷
基金：
俄罗斯基础研究基金会;
关键词：
Switching - Nonvolatile storage - Oxide films - Memristors - Charge trapping;
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