Polarity-free resistive switching characteristics of CuxO films for non-volatile memory applications

被引：2
|
作者：
Lv Hang-Bing [1 ,2 ]
Zhou Peng [1 ,2 ]
Fu Xiu-Feng [1 ,2 ]
Yin Ming [1 ,2 ]
Song Ya-Li [1 ,2 ]
Tang Li [1 ,2 ]
Tang Ting-Ao [1 ,2 ]
Lin Yin-Yin [1 ,2 ]
机构：
[1] Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China
[2] Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2008年 / 25卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Resistive switching characteristics of CuxO films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current-voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating.
引用
收藏
页码：1087 / 1090
页数：4
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