Resistive Switching in High-k Dielectrics for Non-volatile Memory Applications

被引：0
|
作者：
Elliman, R. G. [1 ]
Saleh, M. N. [1 ]
Venkatachalam, D. K. [1 ]
Kim, T-H. [1 ]
Belay, K. [1 ]
Karouta, F. [2 ]
机构：
[1] Australian Natl Univ, Elect Mat Engn Dept, Res Sch Phys & Engn, GPO Box 4, Canberra, ACT 0200, Australia
[2] Australian Natl Univ, Res Sch Phys & Engn, ACT Node, Australian Natl Fabricat Facil, Canberra, ACT 0200, Australia
来源：
2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012) | 2012年
基金：
澳大利亚研究理事会;
关键词：
MECHANISMS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.
引用
收藏
页码：121 / +
页数：2
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