Fast resistive switching in WO3 thin films for non-volatile memory applications

被引：0
|
作者：
Kuegeler, Carsten [1 ]
Rosezin, Roland [1 ]
Weng, Robert [1 ]
Waser, Rainer [1 ]
Menzel, Stephan [2 ]
Klopstra, Bart [2 ]
Boettger, Ulrich [2 ]
机构：
[1] Forschungszentrum Julich GmbH, Inst Solid State Res, D-52425 Julich, Germany
[2] Univ Technol Aachen, Inst Mat Elect Engn 2, D-52074 Aachen, Germany
来源：
2009 9TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2009年
关键词：
Resistive switching; RRAM; solid electrolyte; NANOIMPRINT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Tungsten trioxide (WO3) thin films with Pt and Cu electrodes are characterized regarding the suitability for nonvolatile memory applications. Cells down to 70 x 70 nm(2) are fabricated by a combination of e-beam and nanoimprint lithography. The electrical measurements reveal good properties with switching currents of only 500 nA, fast SET and RESET switching down to 5 ns and retention for 10(4) s with a stable R-OFF/R-ON ratio larger than 10(5).
引用
收藏
页码：900 / 903
页数：4
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