Large-scalable graphene oxide films with resistive switching for non-volatile memory applications

被引：0
|
作者：
Brzhezinskaya, M. [1 ]
Kapitanova, O.O. [2 ]
Kononenko, O.V. [3 ]
Koveshnikov, S. [3 ]
Korepanov, V. [3 ]
Roshchupkin, D. [3 ]
机构：
[1] Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Str. 15, Berlin,12489, Germany
[2] Department of Chemistry, Moscow State University, Moscow,119991, Russia
[3] Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Chernogolovka,142432, Russia
来源：
Journal of Alloys and Compounds | 2022年 / 849卷
基金：
俄罗斯基础研究基金会;
关键词：
Switching - Nonvolatile storage - Oxide films - Memristors - Charge trapping;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Resistive switching properties of TiO2 film for flexible non-volatile memory applications
    Lin, Chun-Chieh
    Liao, Jhih-Wei
    Li, Wang-Ying
    [J]. CERAMICS INTERNATIONAL, 2013, 39 : S733 - S737
  • [22] Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices
    Zhong, L.
    Jiang, L.
    Huang, R.
    de Groot, C. H.
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (09)
  • [23] Non-Volatile Resistive Switching In WO3Thin Films
    Lamichhane, Shiva
    Sharma, Savita
    Tomar, Monika
    Gupta, Vinay
    [J]. 3RD INTERNATIONAL CONFERENCE ON CONDENSED MATTER & APPLIED PHYSICS (ICC-2019), 2020, 2220
  • [24] Enhanced resistive switching and multilevel behavior in bilayered HfAlO/HfAlOx structures for non-volatile memory applications
    Faita, F. L.
    Silva, J. P. B.
    Pereira, M.
    Gomes, M. J. M.
    [J]. APPLIED PHYSICS LETTERS, 2015, 107 (24)
  • [25] Investigation of resistive switching in graphite-like carbon thin film for non-volatile memory applications
    Ren, Bing
    Wang, Lin
    Wang, Linjun
    Huang, Jian
    Tang, Ke
    Lou, Yanyan
    Yuan, Dachao
    Pan, Zhangmin
    Xia, Yiben
    [J]. VACUUM, 2014, 107 : 1 - 5
  • [26] Resistive switching behaviour in a polymannose film for multistate non-volatile memory application
    Tayeb, Ilias A.
    Zhao, Feng
    Abdullah, Jafri M.
    Cheong, Kuan Y.
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2021, 9 (04) : 1437 - 1450
  • [27] Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications
    Molas, G.
    Piccolboni, G.
    Barci, M.
    Traore, B.
    Guy, J.
    Palma, G.
    Vianello, E.
    Blaise, P.
    Portal, J. M.
    Bocquet, M.
    Levisse, A.
    Giraud, B.
    Noel, J. P.
    Harrand, M.
    Bernard, M.
    Route, A.
    De Salvo, B.
    Perniola, L.
    [J]. 2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2016,
  • [28] Laser-induced graphene-based miniaturized, flexible, non-volatile resistive switching memory devices
    Enaganti, Prasanth K.
    Kothuru, Avinash
    Goel, Sanket
    [J]. JOURNAL OF MATERIALS RESEARCH, 2022, 37 (22) : 3976 - 3987
  • [29] Laser-induced graphene-based miniaturized, flexible, non-volatile resistive switching memory devices
    Prasanth K. Enaganti
    Avinash Kothuru
    Sanket Goel
    [J]. Journal of Materials Research, 2022, 37 : 3976 - 3987
  • [30] Non-volatile resistive switching memory device based on ZnO-graphene oxide embedded in a polymer matrix fabricated on a flexible PET substrate
    Hmar, Jehova Jire L.
    [J]. MICROELECTRONIC ENGINEERING, 2020, 233
12345