Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications

被引：0

作者：

Molas, G. ^{[1
]}

Piccolboni, G. ^{[1
]}

Barci, M. ^{[1
]}

Traore, B. ^{[1
]}

Guy, J. ^{[1
]}

Palma, G. ^{[1
]}

Vianello, E. ^{[1
]}

Blaise, P. ^{[1
]}

Portal, J. M. ^{[2
]}

Bocquet, M. ^{[2
]}

Levisse, A. ^{[1
]}

Giraud, B. ^{[1
]}

Noel, J. P. ^{[1
]}

Harrand, M. ^{[1
]}

Bernard, M. ^{[1
]}

Route, A. ^{[1
]}

De Salvo, B. ^{[1
]}

Perniola, L. ^{[1
]}

机构：

[1] CEA, LETI, MINATEC Campus,117 Rue Martyrs, F-38054 Grenoble 9, France

[2] Im2NP, Marseille, France

来源：

2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment. In this paper, we discuss the potential of RRAM for non-volatile memory applications, among them: storage class memory, embedded memory, programmable logic, mass storage and neuromorphic applications. By means of experimental studies and simulations, we analyze the role of the integrated materials on the memory performances and reliability and try to propose optimized stacks suitable for each targeted application.

引用

页数：2

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