Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications

被引：0

作者：

Molas, G. ^{[1
]}

Piccolboni, G. ^{[1
]}

Barci, M. ^{[1
]}

Traore, B. ^{[1
]}

Guy, J. ^{[1
]}

Palma, G. ^{[1
]}

Vianello, E. ^{[1
]}

Blaise, P. ^{[1
]}

Portal, J. M. ^{[2
]}

Bocquet, M. ^{[2
]}

Levisse, A. ^{[1
]}

Giraud, B. ^{[1
]}

Noel, J. P. ^{[1
]}

Harrand, M. ^{[1
]}

Bernard, M. ^{[1
]}

Route, A. ^{[1
]}

De Salvo, B. ^{[1
]}

Perniola, L. ^{[1
]}

机构：

[1] CEA, LETI, MINATEC Campus,117 Rue Martyrs, F-38054 Grenoble 9, France

[2] Im2NP, Marseille, France

来源：

2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment. In this paper, we discuss the potential of RRAM for non-volatile memory applications, among them: storage class memory, embedded memory, programmable logic, mass storage and neuromorphic applications. By means of experimental studies and simulations, we analyze the role of the integrated materials on the memory performances and reliability and try to propose optimized stacks suitable for each targeted application.

引用

页数：2

共 50 条

[21] Non-volatile hybrid memory devices with excellent reliability
Chung, Dae Sung
Kang, Il
Kwon, Soon-Ki
Kim, Yun-Hi
[J]. RSC ADVANCES, 2013, 3 (32) : 13156 - 13162
[22] Resistive switching properties of TiO2 film for flexible non-volatile memory applications
Lin, Chun-Chieh
Liao, Jhih-Wei
Li, Wang-Ying
[J]. CERAMICS INTERNATIONAL, 2013, 39 : S733 - S737
[23] Bipolar Resistive Switching in Magnetostrictive Ni/PZT/Pt Structure for Non-Volatile Memory Applications
Sharma, Savita
Gupta, Surbhi
Gupta, Reema
Borkar, Hitesh
Kumar, Ashok
Gupta, Vinay
Tomar, Monika
[J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 10 (07)
[24] Fast resistive switching in WO3 thin films for non-volatile memory applications
Kuegeler, Carsten
Rosezin, Roland
Weng, Robert
Waser, Rainer
Menzel, Stephan
Klopstra, Bart
Boettger, Ulrich
[J]. 2009 9TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2009, : 900 - 903
[25] A Novel In-memory Matching Circuit Based on Non-volatile Resistive Memory
Quang-Kien Trinh
Quang-Manh Duong
Xuan-Tien Do
Van-Phuc Hoang
Hoang-Gia Vu
Van-Ngoc Dinh
Xuan-Uoc Dao
[J]. 2022 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT), 2022, : 97 - 100
[26] Large-scalable graphene oxide films with resistive switching for non-volatile memory applications
Brzhezinskaya, M.
Kapitanova, O. O.
Kononenko, O., V
Koveshnikov, S.
Korepanov, V
Roshchupkin, D.
[J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 849
[27] Spray deposition of the nanostructured ZnO thin films for non-volatile resistive switching memory applications
N. L. Tarwal
D. P. Mali
K. V. Patil
S. L. Patil
V. L. Patil
V. B. Patil
C. C. Revadekar
T. D. Dongale
P. S. Patil
P. M. Shirage
J. H. Jang
[J]. Applied Physics A, 2023, 129
[28] Spray deposition of the nanostructured ZnO thin films for non-volatile resistive switching memory applications
Tarwal, N. L.
Mali, D. P.
Patil, K. V.
Patil, S. L.
Patil, V. L.
Patil, V. B.
Revadekar, C. C.
Dongale, T. D.
Patil, P. S.
Shirage, P. M.
Jang, J. H.
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2023, 129 (01):
[29] Polarity-free resistive switching characteristics of CuxO films for non-volatile memory applications
Lv Hang-Bing
Zhou Peng
Fu Xiu-Feng
Yin Ming
Song Ya-Li
Tang Li
Tang Ting-Ao
Lin Yin-Yin
[J]. CHINESE PHYSICS LETTERS, 2008, 25 (03) : 1087 - 1090
[30] ELECTRICALLY ERASABLE MEMORY BEHAVES LIKE A FAST, NON-VOLATILE RAM
WALLACE, C
[J]. ELECTRONICS, 1979, 52 (10): : 128 - 131

← 1 2 3 4 5 →