Laser-induced graphene-based miniaturized, flexible, non-volatile resistive switching memory devices

Due to the growing popularity of wearable electronics, flexible memory devices are in great demand. The manufacturing method, materials synthesis, and device structure are key obstacles realize the deployable flexible memory devices. Herein, a single-step process of new and highly conductive porous laser-induced graphene (LIG) has been examined which offers higher electrical conductivity, porous structure and flexibility. Also, surface morphology, crystallinity, functional groups in LIG, and oxygen vacancies in MnO2 nanoparticles have been comprehensively studied for memristor. The, I-on/I(off )ratio of LIG and LIG/MnO2 was 9.15 and 6.8, respectively. The drop casting of MnO2 nanoparticles on LIG increases conductivity with oxygen vacancies, improving memristor behaviour of limited I-on/I(off )ratio. The LIG fluid-based memristor with MnO2 as a metal liquid has outstanding resistance switching capabilities. Moreover, the LIG has showed remarkable performance both substrate and active material for memristor in flexible, wearable, and fluid-based electronics applications.