Influence of Total Ionizing Dose on Sub-100 nm Gate-All-Around MOSFETs

被引：15
|
作者：
Moon, Joon-Bae [1 ]
Moon, Dong-Il [1 ]
Choi, Yang-Kyu [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
Gamma-rays; gate-all-around MOSFET; radiation hardening; silicon nanowires; total ionizing dose effect; RADIATION RESPONSE; MOS CAPACITORS; FIN-WIDTH; OXIDES; TRANSISTORS; IRRADIATION; DEPENDENCE; DEVICES; BIAS;
D O I：
10.1109/TNS.2014.2319245
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of the total ionizing dose (TID) on sub-100 nm gate-all-around (GAA) MOSFETs is investigated through experiments and numerical simulations. Particularly, the TID effect is explored for various gate lengths and radiation doses. The radiation-induced charges and traps under the gate spacer result in changes of the device characteristics and is a dominant factor to cause the device degradation. This phenomenon is experimentally examined by the junction modification of GAA MOSFETs and supported by three-dimensional numerical simulations.
引用
收藏
页码：1420 / 1425
页数：6
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