Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate

被引：6
|
作者：
Zhao, Lantian [1 ,2 ]
Liu, Qiang [1 ,2 ]
Liu, Chenhe [1 ,2 ]
Chen, Lingli [1 ,2 ]
Yang, Yumeng [3 ]
Wei, Xing [1 ,2 ]
Mu, Zhiqiang [1 ,2 ]
Yu, Wenjie [1 ,2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
[3] ShanghaiTech Univ, Shanghai Engn Res Ctr Energy Efficient & Custom A, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 10期
关键词：
Gallium arsenide; Logic gates; Substrates; Silicon-on-insulator; MOSFET; Total ionizing dose; Performance evaluation; nanosheet; gate-all-around; void-embedded silicon on insulator; RADIATION;
D O I：
10.1109/LED.2021.3107851
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The total ionizing dose response of nanosheet gate-all-around metal-oxide-semiconductor field effect transistor (NS GAA MOSFET) fabricated on novel void-embedded silicon on insulator (VESOI) substrate was investigated in this work. Strong radiation tolerance with as small as 46.6mV threshold voltage shift and non-discernable increase of off-state current were observed even at a dose of 7Mrad(Si) X-ray irradiation. Both the experiment and simulation results reveal that the radiation tolerance of the MOSFET device can be inherently attributed to the GAA channel. Our work undoubtedly demonstrates that the NS GAA device on VESOI substrate has great potential for radiation-harden applications under heavy radiation environment.
引用
收藏
页码：1428 / 1431
页数：4
相关论文
共 50 条
  • [1] Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate
    Liu, Qiang
    Mu, Zhiqiang
    Liu, Chenhe
    Zhao, Lantian
    Chen, Lingli
    Yang, Yumeng
    Wei, Xing
    Yu, Wenjie
    [J]. IEEE ELECTRON DEVICE LETTERS, 2021, 42 (05) : 657 - 660
  • [2] Junctionless nanosheet gate-all-around transistors fabricated on void embedded silicon on insulator substrate
    Mu, Zhiqiang
    Zhou, Hongyang
    Yang, Yumeng
    Liu, Qiang
    Wei, Xing
    Yu, Wenjie
    [J]. ELECTRONICS LETTERS, 2023, 59 (04)
  • [3] Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology
    Liu, Yuxin
    Liu, Qiang
    Chen, Jin
    Mu, Zhiqiang
    Wei, Xing
    Yu, Wenjie
    [J]. IEEE Journal of the Electron Devices Society, 2024, 12 : 941 - 947
  • [4] Intrinsic Tolerance to Total Ionizing Dose Radiation in Gate-All-Around MOSFETs
    Comfort, Everett S.
    Rodgers, Martin P.
    Allen, William
    Gausepohl, Steve C.
    Zhang, Enxia X.
    Alles, Michael L.
    Hughes, Harold L.
    McMarr, Patrick J.
    Lee, Ji Ung
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) : 4483 - 4487
  • [5] Design study of the gate-all-around silicon nanosheet MOSFETs
    Lee, Yongwoo
    Park, Geon-Hwi
    Choi, Bongsik
    Yoon, Jinsu
    Kim, Hyo-Jin
    Kim, Dae Hwan
    Kim, Dong Myong
    Kang, Min-Ho
    Choi, Sung-Jin
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (03)
  • [6] Influence of Total Ionizing Dose on Sub-100 nm Gate-All-Around MOSFETs
    Moon, Joon-Bae
    Moon, Dong-Il
    Choi, Yang-Kyu
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (03) : 1420 - 1425
  • [7] Characteristics of Gate-All-Around Silicon Nanowire and Nanosheet MOSFETs with Various Spacers
    Kola, Sekhar Reddy
    Li, Yiming
    Thoti, Narasimhulu
    [J]. 2020 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2020), 2020, : 79 - 82
  • [8] Structure effects in the gate-all-around silicon nanowire MOSFETs
    Liang, Gengchiau
    [J]. EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 2007, : 129 - 132
  • [9] Cointegration of gate-all-around MOSFETs and local silicon-on-insulator optical waveguides on bulk silicon
    Moselund, Kirsten E.
    Bouvet, Didier
    Tschuor, Lucas
    Pott, Vincent
    Dainesi, Paolo
    Eggimann, Christoph
    Le Thomas, Nicolas
    Houdre, Romuald
    Ionescu, Adrian M.
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2007, 6 (01) : 118 - 125
  • [10] DC CHARACTERISTICS OF GATE-ALL-AROUND (GAA) SILICON-ON-INSULATOR MOSFETS AT CRYOGENIC TEMPERATURES
    SIMOEN, E
    CLAEYS, C
    [J]. JOURNAL DE PHYSIQUE IV, 1994, 4 (C6): : 51 - 56
12345