Air Cooling Limits of 3D Stacked Logic Processor and Memory Dies

被引:0
|
作者
Kumari, Niru [1 ]
Shih, Rocky [1 ]
Escobar-Vargas, Sergio [1 ]
Cader, Tahir [1 ]
Govyadinov, Alexander [1 ]
Anthony, Sarah [1 ]
Bash, Cullen [1 ]
机构
[1] Hewlett Packard Corp, Palo Alto, CA 94304 USA
关键词
3D stack; 3D IC stack; thermal management;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Through-Silicon-Vias (TSVs) enable 3D stack of logic processor and memory dies with significant improvement in latency and energy efficiency of large memory-bound computations. However, additional layers of memory die increase IC package thermal resistance. Thermal management has been identified as a key challenge to achieve high computation power and memory density in the same package. In this paper we present a numerical study on temperature mapping of 3D stacked dies in air-cooled package. We consider DRAM based memory with low power, mid power, and high power logic processors. We study the effect of logic processor power and number of memory dies on the temperature profile. This study provides thermally viable design space of compute-power to memory-size.
引用
收藏
页码:92 / 97
页数:6
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