Spectrum imaging of high-k dielectric stacks

被引：0

作者：

MacKenzie, M ^{[1
]}

Craven, AJ

McComb, DW

Hamilton, DA

McFadzean, S

机构：

[1] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

来源：

ELECTRON MICROSCOPY AND ANALYSIS 2003 | 2004年 / 179期

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electron energy loss spectroscopy combined with spectrum imaging gives a powerful technique that can be used to examine the structural, chemical and electronic properties of materials on a sub-nanometre scale. We have used this technique to examine high-k dielectric devices. ELNES from experimental standards have been utilised in the interpretation of the data.

引用

页码：299 / 302

页数：4

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