Dielectric breakdown and charge trapping of ultrathin ZrHfO/SiON high-k gate stacks

被引：11

作者：

Wan, Rui ^{[1
,2
]}

Yan, Jiong ^{[1
]}

Kuo, Yue ^{[1
]}

Lu, Jiang ^{[1
]}

机构：

[1] Texas A&M Univ, Thin Film Nano & Microelect Res Lab, College Stn, TX 77843 USA

[2] Univ Tennessee, Dept Ind & Informat Engn, Knoxville, TN 37996 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 03期

关键词：

high-k dielectrics; dielectric breakdown; interface layer; charge trapping;

D O I：

10.1143/JJAP.47.1639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

One- and two-step breakdown phenomena were observed on the zirconium-doped hafnium oxide (ZrHfO) high-k dielectric films with equivalent oxide thicknesses 1.8 and 2.5 nm, respectively. The difference in the breakdown sequence was attributed to the bulk high-k layer thickness and interface layer structure. The trap generation and charge trapping in the high-k stack was investigated using a new stress-relax method through analyzing the relaxation current change. The results showed that new traps were only created under the high bias condition and the density could be comparable to or even larger than that of the preexisted traps.

引用

页码：1639 / 1641

页数：3

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