SiGe HBT BiCMOS technology for millimeter-wave applications

被引：1

作者：

Joseph, A ^{[1
]}

Dahlstrom, M

Liu, QH

Orner, B

Liu, XF

Sheridan, D

Rassell, R

Dunn, J

Ahlgren, D

机构：

[1] IBM Corp, Semicond Res & Dev Ctr, Essex Jct, VT 05452 USA

[2] Hopewell Junct, Bridgeport, NY 12590 USA

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期

关键词：

D O I：

10.1002/pssc.200564170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the advances in Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) and BiCMOS technology capabilities to address the emerging millimetre-wave (mmWave) applications. SiGe HBTs with f(MAX) performance reaching 350 GHz that are integrated with advanced CMOS and high-frequency passives is envisioned to allow better integration capability for mmWave applications. This capability of SiGe HBT BiCMOS technology is discussed relative to an InP HBT technology. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

引用

页码：448 / +

页数：2

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