SiGe HBT BiCMOS technology for millimeter-wave applications

被引：1
|
作者：
Joseph, A [1 ]
Dahlstrom, M
Liu, QH
Orner, B
Liu, XF
Sheridan, D
Rassell, R
Dunn, J
Ahlgren, D
机构：
[1] IBM Corp, Semicond Res & Dev Ctr, Essex Jct, VT 05452 USA
[2] Hopewell Junct, Bridgeport, NY 12590 USA
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期
关键词：
D O I：
10.1002/pssc.200564170
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the advances in Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) and BiCMOS technology capabilities to address the emerging millimetre-wave (mmWave) applications. SiGe HBTs with f(MAX) performance reaching 350 GHz that are integrated with advanced CMOS and high-frequency passives is envisioned to allow better integration capability for mmWave applications. This capability of SiGe HBT BiCMOS technology is discussed relative to an InP HBT technology. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.
引用
收藏
页码：448 / +
页数：2
相关论文
共 50 条
  • [31] Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications
    John, JP
    Chai, F
    Morgan, D
    Keller, T
    Kirchgessner, J
    Reuter, R
    Rueda, H
    Teplik, J
    White, J
    Wipf, S
    Zupac, D
    [J]. PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2002, : 193 - 196
  • [32] MILLIMETER-WAVE APPLICATIONS AND TECHNOLOGY TRENDS
    MEINEL, HH
    [J]. ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS, 1992, 47 (11-12): : 456 - 468
  • [33] Effects of emitter scaling and device biasing on millimeter-wave VCO performance in 200 GHz SiGe HBT technology
    Kuo, Wei-Min Lance
    Chen, Yi-Jan Emery
    Cressler, John D.
    Freeman, Greg
    [J]. 2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5, 2005, : 852 - 855
  • [34] Miniaturized Millimeter-Wave On-Chip Bandpass Filter Design in 0.13-μm SiGe BiCMOS Technology
    Hou, Zhang Ju
    Xue, Quan
    Yang, Yang
    Zhu, Xi
    Dutkiewicz, Eryk
    [J]. 2017 17TH INTERNATIONAL SYMPOSIUM ON COMMUNICATIONS AND INFORMATION TECHNOLOGIES (ISCIT), 2017,
  • [35] Optimal SiGe:C HBT module for BiCMOS applications
    Lai, LS
    Liang, CS
    Chen, PS
    Hsu, YM
    Liu, YH
    Tseng, YT
    Lu, SC
    Tsai, MJ
    Liu, CW
    [J]. 2003 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS, 2003, : 113 - 116
  • [36] Tight Focus Toward the Future: Tight Material Combination for Millimeter-Wave RF Power Applications: InP HBT SiGe BiCMOS Heterogeneous Wafer-Level Integration
    Weimann N.
    Hossain M.
    Krozer V.
    Heinrich W.
    Lisker M.
    Mai A.
    Tillack B.
    [J]. IEEE Microwave Magazine, 2017, 18 (02): : 74 - 82
  • [37] A Passive Total Power Radiometer in 0.25 μm SiGe BiCMOS for Millimeter-wave Imaging
    Malotaux, E. S.
    Spirito, M.
    [J]. 2016 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2016, : 118 - 121
  • [38] Millimeter-Wave Frequency Doubler With Transistor Grounded-Shielding Structure in 0.13-μm SiGe BiCMOS Technology
    Wang, Lei
    Xiong, Yong-Zhong
    Zhang, Bo
    Hu, San-Ming
    Lim, Teck-Guan
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2011, 59 (05) : 1304 - 1310
  • [39] Millimeter-wave miniaturized hybrid couplers integrated on advanced bicmos technology
    Titz, Diane
    Ferrero, Fabien
    Debroucke, Romain
    Pilard, Romain
    Luxey, Cyril
    Gianesello, Frederic
    Jan, Sebastien
    Gloria, Daniel
    Jacquemod, Gilles
    [J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2012, 54 (10) : 2221 - 2223
  • [40] InP-based HBT technology for millimeter-wave MMIC VCOs
    Cowles, J
    Tran, L
    Wang, H
    Lin, E
    Block, T
    Streit, D
    Oki, A
    [J]. IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 199 - 202
12345