SiGe HBT BiCMOS technology for millimeter-wave applications

被引：1
|
作者：
Joseph, A [1 ]
Dahlstrom, M
Liu, QH
Orner, B
Liu, XF
Sheridan, D
Rassell, R
Dunn, J
Ahlgren, D
机构：
[1] IBM Corp, Semicond Res & Dev Ctr, Essex Jct, VT 05452 USA
[2] Hopewell Junct, Bridgeport, NY 12590 USA
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期
关键词：
D O I：
10.1002/pssc.200564170
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the advances in Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) and BiCMOS technology capabilities to address the emerging millimetre-wave (mmWave) applications. SiGe HBTs with f(MAX) performance reaching 350 GHz that are integrated with advanced CMOS and high-frequency passives is envisioned to allow better integration capability for mmWave applications. This capability of SiGe HBT BiCMOS technology is discussed relative to an InP HBT technology. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.
引用
收藏
页码：448 / +
页数：2
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