Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

被引：9
|
作者：
Forsten, Henrik [1 ]
Saijets, Jan H. [1 ]
Kantanen, Mikko [1 ]
Varonen, Mikko [1 ]
Kaynak, Mehmet [2 ]
Piironen, Petri [3 ]
机构：
[1] VTT Tech Res Ctr Finland, MilliLab, Espoo 02044, Finland
[2] IHP Leibniz Inst Innovat Mikroelekt, D-15236 Frankfurt, Oder, Germany
[3] European Space Agcy ESTEC, NL-2200 AG Noordwijk, Netherlands
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2021年 / 69卷 / 11期
基金：
芬兰科学院;
关键词：
Impedance matching; Couplers; Wideband; Bandwidth; Silicon germanium; Temperature measurement; Scattering parameters; Millimeter-wave; noise sources; SiGe; CALIBRATION;
D O I：
10.1109/TMTT.2021.3104028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.
引用
收藏
页码：4689 / 4696
页数：8
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