Millimeter-wave amplifiers using a 0.8 μm Si/SiGe HBT technology

被引：0

作者：

Chaitier, S ^{[1
]}

Sönmez, E

Schumacher, H

机构：

[1] Univ Ulm, Dept Electron Devices & Circuits, Ulm, Germany

[2] TES Elect Solut, Stuttgart, Germany

来源：

2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2006年

关键词：

millimeter wave bipolar transistor amplifiers; heterojunction bipolar transistors;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors present three amplifiers, operating at 36, 40 and 50GHz implemented in a low-cost 0.8 mu m Si/SiGe HBT Technology which features an f(T) and f(MAX) of 80GHz. Each amplifier shows a high gain, a high isolation and a good linearity. The high performance is obtained by using appropriate design techniques such as cascode topology, DC filtering network and efficient isolation techniques.

引用

页码：277 / +

页数：2

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