High aspect ratio contact clean study in 58nm flash device

被引:0
|
作者
Yu, Pi-Chun [1 ]
Chen, Cheng-Kuen [1 ]
Lin, Jin-Lang [1 ]
Wu, Chih-Ning [1 ]
Hiroshi, Matsuo [1 ]
机构
[1] Powerchip Semicond Corp, Hsinchu, Taiwan
来源
ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES IX: UCPSS 2008-9TH INTERNATIONAL SYMPOSIUM ON ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES (UCPSS) | 2009年 / 145-146卷
关键词
Contact clean; nano-spray; PRE; single wafer tool; AM1;
D O I
10.4028/www.scientific.net/SSP.145-146.35
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:35 / 38
页数:4
相关论文
共 50 条
  • [21] Degradation of release layer on high aspect ratio mold by contact angle measurement
    Takahashi, Junki
    Taniguchi, Jun
    MICROELECTRONIC ENGINEERING, 2011, 88 (08) : 2141 - 2144
  • [22] Mechanism of etch stop in high aspect-ratio contact hole etching
    Ohiwa, T
    Kojima, A
    Sekine, M
    Sakai, I
    Yonemoto, S
    Watanabe, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9A): : 5060 - 5063
  • [23] Selective plasma etching for high-aspect-ratio oxide contact holes
    Kim, YS
    Wei, PTC
    Tynan, GR
    Charatan, R
    Hemker, D
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (01): : 327 - 331
  • [24] Genotoxicity study of high aspect ratio silver nanowires
    Charehsaz, Mohammad
    Coskun, Sahin
    Unalan, Husnu Emrah
    Reis, Rengin
    Helvacioglu, Sinem
    Giri, Ashok Kumar
    Aydin, Ahmet
    TOXICOLOGICAL AND ENVIRONMENTAL CHEMISTRY, 2017, 99 (5-6): : 837 - 847
  • [25] Pattern collapse in high aspect ratio DUV- and 193nm resists
    Domke, WD
    Graffenberg, VL
    Patel, S
    Rich, GK
    Cao, HB
    Nealey, PF
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 : 313 - 321
  • [26] A simple approach to sub-100 nm resist nanopatterns with a high aspect ratio
    Zong, B. Y.
    Ho, P.
    Han, G. C.
    Chow, G. M.
    Chen, J. S.
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2013, 23 (03)
  • [27] High aspect ratio InGaAs FinFETs with sub-20 nm fin width
    Vardi, Alon
    Lin, Jianqiang
    Lu, Wenjie
    Zhao, Xin
    del Alamo, Jesus A.
    2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2016,
  • [28] Cryogenic Etching of High Aspect Ratio 400-nm Pitch Silicon Gratings
    Miao, Houxun
    Chen, Lei
    Mirzaeimoghri, Mona
    Kasica, Richard
    Wen, Han
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2016, 25 (05) : 963 - 967
  • [29] 25 nm mechanically buttressed high aspect ratio zone plates: Fabrication and performance
    Olynick, DL
    Harteneck, BD
    Veklerov, E
    Tendulkar, M
    Liddle, JA
    Kilcoyne, ALD
    Tyliszczak, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 3186 - 3190
  • [30] A study on reactive ion etching lag of a high aspect ratio contact hole in a magnetized inductively coupled plasma
    Cheong, H. W.
    Lee, W. H.
    Kim, J. W.
    Kim, W. S.
    Whang, K. W.
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2014, 23 (06):