A simple approach to sub-100 nm resist nanopatterns with a high aspect ratio

被引：6

作者：

Zong, B. Y. ^{[1
]}

Ho, P. ^{[1
,2
]}

Han, G. C. ^{[1
]}

Chow, G. M. ^{[2
]}

Chen, J. S. ^{[2
]}

机构：

[1] ASTAR, Data Storage Inst, Singapore 117608, Singapore

[2] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2013年 / 23卷 / 03期

关键词：

D O I：

10.1088/0960-1317/23/3/035038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple methodology to prepare sub-100 nm resist nanopatterns with a high aspect ratio for the transfer of device nanofeatures is demonstrated. The novel method is based on a two- or multi-step developing process with the incorporation of an similar to 4 nm thick metal film to protect the fine resist nanopatterns in the developer solution. Using this approach, sub-100 nm resist nanopatterns of different shapes were readily fabricated using the positive- and negative-tone electron-beam resists. Subsequently, fine device nanostructures could be readily converted from these fine resist nanopatterns with a high aspect ratio.

引用

页数：5

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