A study on reactive ion etching lag of a high aspect ratio contact hole in a magnetized inductively coupled plasma

被引：9
|
作者：
Cheong, H. W. [1 ]
Lee, W. H. [1 ]
Kim, J. W. [1 ]
Kim, W. S. [1 ]
Whang, K. W. [1 ]
机构：
[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Plasma Lab, Seoul 151742, South Korea
来源：
PLASMA SOURCES SCIENCE & TECHNOLOGY | 2014年 / 23卷 / 06期
关键词：
high aspect ratio contact hole; magnetized inductively coupled plasma; reactive ion etching lag; oxide etch rate; oxide-to-ACL selectivity; plasma density; electron temperature; SILICON DIOXIDE; SIO2; C4F8; DISSOCIATION; FREQUENCY; DENSITY;
D O I：
10.1088/0963-0252/23/6/065051
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
Reactive ion etching lag (RIE lag) characteristics of a high aspect ratio contact hole in a magnetized inductively coupled plasma (M-ICP) etcher were investigated. The dependence of RIE lag on various process parameters, such as neutral gas pressure, magnetic flux density, bias power, bias frequency, and source power were investigated. It was confirmed that RIE lag could be reduced by properly adjusting these variables. Furthermore, the application of a magnetic field to the ICP etcher was helpful to increase the oxide etch rate and oxide-to-amorphous carbon layer selectivity.
引用
收藏
页数：16
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