Nanoharvesting of GaN nanowires on Si (211) substrates by plasma-assisted molecular beam epitaxy

被引：3

作者：

Agrawal, Mansi ^{[1
,2
]}

Jain, Anubha ^{[1
]}

Rao, D. V. Sridhara ^{[3
]}

Pandey, Akhilesh ^{[1
]}

Goyal, Anshu ^{[1
]}

Kumar, Anand ^{[1
]}

Lamba, Sushil ^{[1
]}

Mehta, B. R. ^{[2
]}

Muraleedharan, K. ^{[4
]}

Muralidharan, R. ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

[2] Indian Inst Technol, Dept Phys, New Delhi 110016, India

[3] Def Met Res Lab, Hyderabad 500058, Andhra Pradesh, India

[4] DRDO Bhawan, Directorate Mat, New Delhi 110011, India

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 402卷

关键词：

Nanostructures; Molecular beam epitaxy; GaN; Semiconducting III-V materials; CATALYST-FREE; SILICON; GROWTH; HETEROEPITAXY;

D O I：

10.1016/j.jcrysgro.2014.05.004

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Self-induced GaN nanowires were grown on Si (211) substrates by plasma assisted molecular beam epitaxy. It is found that nitridation of Si (211) substrates at high temperatures in excess of 1170 degrees C leads to the nanopatterning of the Si (211) surface thereby providing the template for patterned growth of nanowires. The grown nanowires were characterised by field emission scanning electron microscopy, high resolution X-ray diffraction and high resolution transmission electron microscopy which reveal that the GaN nanowires have wurtzite crystal structure and are of high crystalline quality. Through this paper we show that high index silicon substrates with Si (111) terraces can be used to grow nanowires aligned at desired angles. (C) 2014 Published by Elsevier B.V.

引用

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页码：37 / 41

页数：5

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