Synthesis of GaN nanowires on Si (111) substrates by molecular beam epitaxy

In this work we study growth of semiconductor GaN nanowires (NWs) on Si(111) substrates by means of molecular beam epitaxy. We demonstrate that the substrate temperature affects both the surface density and growth rate of the synthesized NWs. It was determined that at a fixed flux of nitrogen equal to 1.3 cm(3)/min the maximum growth rate of NWs is similar to 38 nm/h at a substrate temperature - 800 degrees C. It was also found that the growth rate of NWs on the substrates treated with the oxide removal procedure is half the growth rate on substrates covered with oxide, while their surface density is twice higher in the first case. In addition we have studied influence of Ga flux on NWs formation.