A unified environment for the modeling of ultra deep submicron MOS transistors

This paper discusses the aspects of modern MOS modeling requirements. Starting from the fact, that even the Compact Model Council (CMC) outlined BSIM3v3 as a standard MOS simulation model, many other models are used throughout the semiconductor community. Their common approach is they are all highly scalable to cover a wide range of transistor dimensions. To cover this effect, a strategy for efficient model parameter extraction with a special emphasis on scalability is illustrated. This leads to a software architecture and a data base concept, which enables modeling engineers to handle the parameter extraction for different simulation models from one common measurement base in a very efficient and flexible way.