Monolithically integrated 1.55 μm photoreceiver-laser driver optoelectronic integrated circuit

被引:0
|
作者
Pradhan, S [1 ]
Bhattacharya, P
Liu, WK
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48105 USA
[2] IQE Inc, Bethlehem, PA 18015 USA
关键词
D O I
10.1049/el:20020607
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An InP-based monolithically integrated optoelectronic integrated circuit (OEIC), consisting of a 1.55 mum photoreceiver and a laser driver, is demonstrated. The circuit, designed and fabricated with heterojunction bipolar transistors, has a -3 dB bandwidth of 8.1 GHz and bit-error-rate measurements show that the circuit can operate at 10 Gbit/s. The OEIC is tested with a singlemode 1.55 mum laser connected externally.
引用
收藏
页码:987 / 989
页数:3
相关论文
共 50 条
  • [41] MONOLITHICALLY INTEGRATED LOGICAL BASIC CIRCUIT.
    Berger, H.H.
    Wiedmann, S.K.
    IBM Technical Disclosure Bulletin, 1973, 16 (02): : 650 - 651
  • [42] A novel technique to reduce crosstalk in monolithically integrated high speed photoreceiver arrays
    Syao, KC
    GutierrezAitken, AL
    Yang, K
    Zhang, X
    Haddad, GI
    Bhattacharya, P
    IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 649 - 652
  • [43] Monolithically integrated widely tunable laser source operating at 2 μm
    Latkowski, S.
    Haensel, A.
    van Veldhoven, P. J.
    D'Agostino, D.
    Rabbani-Haghighi, H.
    Docter, B.
    Bhattacharya, N.
    Thijs, P. J. A.
    Ambrosius, H. P. M. M.
    Smit, M. K.
    Williams, K. A.
    Bente, E. A. J. M.
    OPTICA, 2016, 3 (12): : 1412 - 1417
  • [44] 1.3-1.55 MU-M WAVELENGTH COMMUNICATION-SYSTEMS - INTEGRATED PHOTORECEIVER ON GAAS SUBSTRATE
    RAZEGHI, M
    RAMDANI, J
    VANBREMEERSCH, J
    VILCOT, JP
    DECOSTER, D
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : C580 - C580
  • [45] Monolithically Integrated and Galvanically Isolated GaN Gate Driver
    Basler, Michael
    Reiner, Richard
    Grieshaber, Daniel
    Benkhelifa, Fouad
    Moench, Stefan
    IEEE OPEN JOURNAL OF POWER ELECTRONICS, 2025, 6 : 144 - 149
  • [46] 40 Gbit/s 1.55 μm monolithic integrated GaAs-based PIN-HEMT photoreceiver
    Hurm, V
    Benz, W
    Bronner, W
    Hülsmann, A
    Jakobus, T
    Köhler, K
    Leven, A
    Ludwig, M
    Raynor, B
    Rosenzweig, J
    Schlechtweg, M
    Thiede, A
    24TH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION, VOL 1-3: VOL 1: REGULAR AND INVITED PAPERS; VOL 2: TUTORIALS AND SYMPOSIUM PAPERS; VOL 3: POSTDEADLINE PAPERS, 1998, : B121 - B123
  • [47] On the optimum design of the front-end PIN-heterojunction bipolar transistor optoelectronic integrated circuit photoreceiver
    Das, NR
    Deen, MJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (03): : 1067 - 1071
  • [48] A HIGH-SPEED BURST MODE OPTOELECTRONIC INTEGRATED-CIRCUIT PHOTORECEIVER USING INP/INGAAS HBTS
    LUNARDI, L
    CHANDRASEKHAR, S
    SWARTZ, RG
    HAMM, RA
    QUA, GJ
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (07) : 817 - 818
  • [49] Integrated circuit implementation for a GaNHFETs driver circuit
    Wang, B.
    Riva, M.
    Bakos, J.
    Monti, A.
    APEC 2008: TWENTY-THIRD ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-4, 2008, : 901 - +
  • [50] 7.4 GBIT/S MONOLITHICALLY INTEGRATED GAAS/ALGAAS LASER DIODE-LASER DRIVER STRUCTURE
    HORNUNG, J
    WANG, ZG
    BRONNER, W
    OLANDER, E
    KOHLER, K
    GANSER, P
    RAYNOR, B
    BENZ, W
    LUDWIG, M
    ELECTRONICS LETTERS, 1993, 29 (19) : 1694 - 1696