共 50 条
- [2] 1.3-1.55 MU-WAVELENGTH INTEGRATED PHOTORECEIVER USING GALNAS GAAS HETEROEPITAXY [J]. IEE PROCEEDINGS-J OPTOELECTRONICS, 1989, 136 (01): : 83 - 87
- [4] Epitaxial SiGeC photodiode grown on Si substrate with response in the 1.3-1.55 mu m wavelength range [J]. SILICON-BASED MONOLITHIC AND HYBRID OPTOELECTRONIC DEVICES, 1997, 3007 : 68 - 73
- [5] V-GROOVE DISTRIBUTED FEEDBACK LASER FOR 1.3-1.55 MU-M OPERATION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (18) : 1148 - 1150
- [7] Epitaxial SiGeC/Si photodetector with response in the 1.3-1.55 mu m wavelength range [J]. IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 665 - 668
- [10] Low cost lattice-engineered 1.3-1.55 μm wavelength waveguide/detector/MMIC OEICs for broadband communication systems [J]. PROCEEDINGS OF THE IEEE 1998 NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE, 1998, : 666 - 674