Monolithically integrated 1.55 μm photoreceiver-laser driver optoelectronic integrated circuit

被引:0
|
作者
Pradhan, S [1 ]
Bhattacharya, P
Liu, WK
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48105 USA
[2] IQE Inc, Bethlehem, PA 18015 USA
关键词
D O I
10.1049/el:20020607
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An InP-based monolithically integrated optoelectronic integrated circuit (OEIC), consisting of a 1.55 mum photoreceiver and a laser driver, is demonstrated. The circuit, designed and fabricated with heterojunction bipolar transistors, has a -3 dB bandwidth of 8.1 GHz and bit-error-rate measurements show that the circuit can operate at 10 Gbit/s. The OEIC is tested with a singlemode 1.55 mum laser connected externally.
引用
收藏
页码:987 / 989
页数:3
相关论文
共 50 条
  • [21] A novel InAlAs/InGaAs layer structure for monolithically integrated photoreceiver
    Hodel, U
    Orzati, A
    Marso, M
    Homan, O
    Fox, A
    von der Hart, A
    Förster, A
    Kordos, P
    Lüth, H
    2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 466 - 469
  • [22] MONOLITHICALLY INTEGRATED INGAAS/INP PIN-JFET PHOTORECEIVER
    WAKE, D
    SCOTT, EG
    HENNING, ID
    ELECTRONICS LETTERS, 1986, 22 (13) : 719 - 721
  • [23] MONOLITHICALLY INTEGRATED PHOTORECEIVER WITH LARGE GAIN-BANDWIDTH PRODUCT
    WOJTCZUK, SJ
    BALLANTYNE, JM
    CHEN, YK
    WANUGA, S
    ELECTRONICS LETTERS, 1987, 23 (11) : 574 - 576
  • [24] A monolithically integrated 1-Gb/s silicon photoreceiver
    Schow, CL
    Schaub, JD
    Li, R
    Qi, J
    Campbell, JC
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (01) : 120 - 121
  • [25] Pound-Drever-Hall Laser Frequency Stabilization of Tunable 1.55 μm Monolithically Integrated Semiconductor Lasers Using an Integrated Phase Modulator
    Jones, Rachel
    Williams, Kevin
    Bente, Erwin
    25TH EUROPEAN CONFERENCE ON INTEGRATED OPTICS, ECIO 2024, 2024, 402 : 21 - 27
  • [26] CAN OPTOELECTRONIC AND SILICON CHIPS BE MONOLITHICALLY INTEGRATED
    TEWKSBURY, SK
    HORNAK, LA
    LASER FOCUS WORLD, 1994, 30 (05): : 151 - 156
  • [27] Agile and fast switching monolithically integrated four wavelength selectable source at 1.55 μm
    Talneau, A
    Allovon, M
    Bouadma, N
    Slempkes, S
    Ougazzaden, A
    Nakajima, H
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (01) : 12 - 14
  • [28] MONOLITHICALLY INTEGRATED HBT/MESFET CIRCUIT
    ZAMPARDI, PJ
    BECCUE, SM
    PEDROTTI, KD
    PIERSON, RL
    CHANG, MF
    WANG, KC
    CHESKIS, D
    CHANG, CE
    ASBECK, PM
    ELECTRONICS LETTERS, 1993, 29 (12) : 1100 - 1102
  • [29] MONOLITHICALLY INTEGRATED SQW LASER AND HBT LASER DRIVER VIA SELECTIVE OMVPE REGROWTH
    SLATER, DB
    ENQUIST, PM
    HUTCHBY, JA
    REED, FE
    MORRIS, AS
    KOLBAS, RM
    TREW, RJ
    LUJAN, AS
    SWART, JW
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (07) : 791 - 794
  • [30] A Monolithically Integrated SiC Circuit Breaker
    Boettcher, Norman
    Erlbacher, Tobias
    IEEE ELECTRON DEVICE LETTERS, 2021, 42 (10) : 1516 - 1519