Integrated circuit implementation for a GaNHFETs driver circuit

The paper presents the design of an integrated circuit (IC) for a 10MHz low power-loss driver for GaN HFETs. While the main elements of the topology were introduced in a previous work, here the authors focus on the design of the IC and present preliminary results and considerations. The driver circuit proposed, based upon new-two-stage positive-to-negative level shifters and resonant topology, has-been designed-and implemented using the cost-effective Smart Voltage eXtension (SVX) technique. Detailed analysis of the design process as well as a full set of simulations, reported in the-paper, fully demonstrate the possibility to exploit the advantages of GaN devices by means of a smart and convenient implementation.