Low-Vt devices replacement for domino circuits

被引：0

作者：

Zhu, QK ^{[1
]}

Lingareddy, M ^{[1
]}

机构：

[1] Intel Corp, Castro Valley, CA 94552 USA

来源：

2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An automatic CAD flow was developed to replace devices in domino NMOS stack, CMOS driver and CMOS receiver to the domino circuitry. Input noise thresholds are considered in these devices low-Vt replacement, since the domino circuitry with low-Vt devices increases with the leakage current and prone to logic failures due to the noise. All experiments in this paper were done in a 0.13mum Intel process.

引用

页码：597 / 600

页数：4

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