Low-Vt devices replacement for domino circuits

被引：0
|
作者：
Zhu, QK [1 ]
Lingareddy, M [1 ]
机构：
[1] Intel Corp, Castro Valley, CA 94552 USA
来源：
2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An automatic CAD flow was developed to replace devices in domino NMOS stack, CMOS driver and CMOS receiver to the domino circuitry. Input noise thresholds are considered in these devices low-Vt replacement, since the domino circuitry with low-Vt devices increases with the leakage current and prone to logic failures due to the noise. All experiments in this paper were done in a 0.13mum Intel process.
引用
收藏
页码：597 / 600
页数：4
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