Die attach thermal monitoring of IGBT devices

被引：2

作者：

Masana, F. N. ^{[1
]}

机构：

[1] Univ Politecn Cataluna, MNT Grp, Dept Elect Engn, ES-08034 Barcelona, Spain

来源：

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2006年

关键词：

thermal impedance; bondline thickness; thermal phase shift; characteristic length;

D O I：

10.1109/MIXDES.2006.1706613

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Die attach contribution to total thermal resistance can be a significant part of its final value. Material choice, bondline thickness, voiding and interface delamination are some of the key factors affecting attachment quality, while process variations may seriously impair the final heat transfer characteristics of finished devices. In this work, we introduce a fast method to monitor die attach interface in finished devices. The measurements are performed onto IGBT's, although the method may be used on any bipolar device by correct choice of measurement setup.

引用

页码：421 / 424

页数：4

共 50 条

[1] High Thermal Die-Attach Paste Development for Analog Devices
Higaki, Kiichiro
Takahashi, Toru
Ono, Akinori
Koike, Daisuke
Hori, Masahiko
Kusaka, Keiichi
Nishi, Takayuki
Mori, Takeshi
2020 IEEE 70TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2020), 2020, : 1414 - 1421
[2] MONITORING THERMAL-PROCESSING OF AG GLASS DIE ATTACH ADHESIVES
DELMONT, J
ADHESIVES AGE, 1995, 38 (02): : 43 - 44
[3] Characterisation of die attach for power devices using thermal impedance measurement practice and experiment
Ludwig, M
Gaedke, A
Slattery, O
Flannery, J
O'Mathuna, SC
ITHERM 2000: SEVENTH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS, VOL 2, PROCEEDINGS, 2000, : 378 - 384
[4] Silver Sintering Die Attach Process for IGBT Power Module Production
Zhao, Yimin
Mumby-Croft, Paul
Jones, Steve
Dai, Andy
Dou, Zechun
Wang, Yafei
Qin, Feng
2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2017, : 3091 - 3094
[5] Detection of Degradation in Die-Attach Materials by In-Situ Monitoring of Thermal Properties
Wittler, Olaf
Nejadari, Ali Mazloum
Michel, Bernd
2009 11TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC 2009), 2009, : 153 - 157
[6] Thermal modelling of IGBT devices
Trigkidis, G.
Bousbaine, A.
Thorn, R.
PROCEEDINGS OF THE 41ST INTERNATIONAL UNIVERSITIES POWER ENGINEERING CONFERENCE, VOLS 1 AND 2, 2006, : 584 - 588
[7] Investigation of SnPbAg solder for die attach of GaAs devices
Parsey, JM
Kyler, K
Cronin, W
Mobley, P
Scrivner, BL
Valocchi, S
Sue, L
Mohr, J
Monarch, K
Keller, B
Lai, LP
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (11) : 1715 - 1724
[8] Short time die attach characterization of semiconductor devices
Szabo, Peter
Rencz, Marta
13TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATION OF ICS AND SYSTEMS, PROCEEDINGS, 2007, : 12 - 17
[9] Investigation of Die Attach Quality in Power Electronic Devices
Harkai, Endre
Balogh, Balint
2009 32ND INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY, 2009, : 268 - 272
[10] Effect of Aging and Thermal Shock on the Reliability of Silver Sintered Die Attach for SiC Power Devices
Osaka University, Flexible 3D System Integration Laboratory, Mihogaoka 8-1, Osaka, Ibaraki
567-0047, Japan
不详
530-0011, Japan
Int. Conf. Electron. Packag., ICEP, 2023, (141-142):

← 1 2 3 4 5 →