Detection of Degradation in Die-Attach Materials by In-Situ Monitoring of Thermal Properties

被引：5

作者：

Wittler, Olaf ^{[1
]}

Nejadari, Ali Mazloum ^{[1
]}

Michel, Bernd ^{[1
]}

机构：

[1] Fraunhofer IZM, Micro Mat Ctr Berlin, D-12489 Berlin, Germany

来源：

2009 11TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC 2009) | 2009年

关键词：

D O I：

10.1109/EPTC.2009.5416558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a method for indicating cracks in die attach materials, which is non-destructive and enables in-situ monitoring of degradation. It is based on the principle that voids or cracks cause the change of thermal behaviour in electronic packages. Therefore the thermal behaviour is due to alter over lifetime. Parametric simulation models have been developed, which enable the prediction of influence of delamination areas on transient thermal properties for different die attach materials in example COB packages. The results show an increase of delamination area, which causes a significant increase of transient thermal resistance. The computational results are validated with experimental measurements, which show a practical feasibility of the proposed method, which can accelerate and simplify lifetime testing of die attach interconnects.

引用

页码：153 / 157

页数：5

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