Die attach thermal monitoring of IGBT devices

被引：2
|
作者：
Masana, F. N. [1 ]
机构：
[1] Univ Politecn Cataluna, MNT Grp, Dept Elect Engn, ES-08034 Barcelona, Spain
来源：
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2006年
关键词：
thermal impedance; bondline thickness; thermal phase shift; characteristic length;
D O I：
10.1109/MIXDES.2006.1706613
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Die attach contribution to total thermal resistance can be a significant part of its final value. Material choice, bondline thickness, voiding and interface delamination are some of the key factors affecting attachment quality, while process variations may seriously impair the final heat transfer characteristics of finished devices. In this work, we introduce a fast method to monitor die attach interface in finished devices. The measurements are performed onto IGBT's, although the method may be used on any bipolar device by correct choice of measurement setup.
引用
收藏
页码：421 / 424
页数：4
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