All-SiC inductively-loaded half-bridge inverter characterization of 4H-SiC power BJTs up to 400V/22 A

被引：1

作者：

Luo, Y ^{[1
]}

Fursin, L ^{[1
]}

Zhao, JH ^{[1
]}

Alexandrov, P ^{[1
]}

Wright, B ^{[1
]}

Weiner, M ^{[1
]}

机构：

[1] Rutgers State Univ, SiCLAB, ECE Dept, Piscataway, NJ 08854 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

fabrication; half-bridge inverter; power transistor; SiC;

D O I：

10.4028/www.scientific.net/MSF.389-393.1325

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports design, fabrication and characterization of 4H-SiC power BJTs in an all-SiC inductively loaded half-bridge inverter. DC characteristics and switching waveforms of SiC BJTs are reported. Power losses for both SiC BJT turn-on and turn-off are compared with Si IGBT power losses in an otherwise identical all-Si half-bridge inverter at room temperature and at 150degreesC.

引用

页码：1325 / 1328

页数：4

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