Paralleling six 320A 1200V All-SiC Half-bridge Modules for a Large Capacity Power Stack

被引：0

作者：

Lu, David Hongfei ^{[1
]}

Takubo, Hiromu ^{[1
]}

Takano, Sho ^{[1
]}

Suzuki, Yuhei ^{[2
]}

机构：

[1] Fuji Elect Co Ltd, Corp R&D Headquarters, Adv Technol Lab, Hino, Tokyo, Japan

[2] Fuji Elect Co Ltd, Power Elect Syst Business Grp, Dev Div, Suzuka, Japan

来源：

2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA) | 2018年

关键词：

Power Stack; Parallel Connection; ShortCircuit; All-SiC Module; BEHAVIOR;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We developed a 400V/400kW power stack by paralleling six 320A/1200V half-bridge all-SiC modules. Structural imbalance of parasitic inductance is contained within 3% in the laminated bus-bar with the aid of electromagnetics simulation. Switching dynamics in normal operation conditions and arm short circuit condition were investigated under a hard-switching driving scheme. Current imbalance less than 12% was ensured during both steady-state conduction and dynamic switching. Compared with conventional IGBTs, the switching loss of the all-SiC modules is reduced by more than 60%, and the switching frequency can be increased more than twice.

引用

页码：3390 / 3395

页数：6

共 10 条

[1] First 1.7 kV all-SiC half-bridge power module
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