Simulation, Fabrication and Characterization of 6500V 4H-SiC power DMOSFETs

4H-SiC power DMOSFETs with breakdown voltage higher than 8.0 kV has been successfully fabricated by using an 60-mu m-thick, 1.0x10(15) cm(-3) doped drift epilayer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC DMOSFETs were reported. A peak effective channel mobility of 20 cm(2)/Vs was extracted from a test MOSFET. A specific on-resistance of 80 m Omega-cm(2) were measured with at a V-GS of 20V, a 32% reduction in R-on,R-sp, compared to a previously reported value. A leakage current of 12 mu A was measured at a drain bias of 8.0 kV from a 4H-SiC DMOSFE with an active area of 1.0x10(-2) cm(2). In this report, four new termination structures (T1-T3) were implemented in test PiN diodes and tested, for a reduction of termination length.