Performance of 60 A, 1200 V 4H-SiC DMOSFETs

被引：24

作者：

Hull, Brett A. ^{[1
]}

Jonas, Charlotte ^{[1
]}

Ryu, Sei-Hyung ^{[1
]}

Das, Mrinal ^{[1
]}

O'Loughlin, Michael ^{[1
]}

Husna, Fatima ^{[1
]}

Callanan, Robert ^{[1
]}

Richmond, Jim ^{[1
]}

Agarwal, Anant ^{[1
]}

Palmour, John ^{[1
]}

Scozzie, Charles ^{[2
]}

机构：

[1] Cree Inc, Durham, NC 27703 USA

[2] Army Res Lab, Adelphi, MD 20783 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

power DMOSFET; power semiconductor device; MOS transistor;

D O I：

10.4028/www.scientific.net/MSF.615-617.749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large area (8 mm x 7 mm) 1200 V 4H-SiC DMOSFETs with a specific on-resistance as low as 9 m Omega(.)cm(2) 2 (at V(GS) = 20 V) able to conduct 60 A at a power dissipation of 200 W/cm(2) are presented. On-resistance is fairly stable with temperature, increasing from 11.5 (at VGS 15 V) at 25 degrees C to 14 m Omega(.)cm(2) at 150 degrees C. The DMOSFETs exhibit avalanche breakdown at 1600 V with the gate shorted to the source, although sub-breakdown leakage currents up to 50 mu A are observed at 1200 V and 200 degrees C due to the threshold voltage lowering with temperature. When switched with a clamped inductive load circuit from 65 A conducting to 750 V blocking the turn-on and turn-off energies at 150 degrees C were less than 4.5 mJ.

引用

页码：749 / 752

页数：4

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